Enhanced interlayer neutral excitons and trions in MoSe2/MoS2/MoSe2 trilayer heterostructure
نویسندگان
چکیده
Van der Waals heterostructures have recently emerged, in which two distinct transitional metal dichalcogenide (TMD) monolayers are stacked vertically to generate interlayer excitons (IXs), offing new opportunites for the design of optoelectronic devices. However, bilayer heterostructure with type-II band alignment can only produce low quantum yield. Here, we present observation neutral and trions MoSe2/MoS2/MoSe2 trilayer (Tri-HS). In comparison 8 K heterostructure, addition a MoSe2 layer Tri-HS significantly increase yield IXs. It is believed symmetrical alignments formed could effectively promote IX radiation recombination. By analyzing photoluminescence (PL) spectrum IXs at cryogenic temperature power dependence, existence was confirmed. Our results provide promising platform development more efficient devices investigation physical properties TMDs.
منابع مشابه
Dielectric screening of excitons and trions in single-layer MoS2.
Photoluminescence (PL) properties of single-layer MoS2 are indicated to have strong correlations with the surrounding dielectric environment. Blue shifts of up to 40 meV of exciton or trion PL peaks were observed as a function of the dielectric constant of the environment. These results can be explained by the dielectric screening effect of the Coulomb potential; based on this, a scaling relati...
متن کاملGate-induced interlayer asymmetry in ABA-stacked trilayer graphene
We calculate the electronic band structure of ABA-stacked trilayer graphene in the presence of external gates, using a self-consistent Hartree approximation to take account of screening. In the absence of a gate potential, there are separate pairs of linear and parabolic bands at low energy. A gate field perpendicular to the layers breaks mirror reflection symmetry with respect to the central l...
متن کاملFine structure of trions and excitons in single GaAs quantum dots
Although the negatively charged trion in semiconductors was originally predicted in 1958 by Lampert, a proper identification of the X was not achieved until the early 1990s in remotely doped high-quality quantum-well ~QW! structures. Since then, extensive work has been carried out on the two-dimensional ~2D! X in wide quantum wells, and more recently on the 0D X in QD’s. In many of these studie...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nano Research
سال: 2022
ISSN: ['1998-0000', '1998-0124']
DOI: https://doi.org/10.1007/s12274-022-4189-6